ATOMIC SCALE GRID FOR MODELING SEMICONDUCTOR STRUCTURES AND FABRICATION PROCESSES

Roughly described, a system for simulating a temporal process in a body includes a meshing module to impose a grid of nodes on the body, the grid having a uni-form node spacing which is less than the quantum separa-tion distance in silicon. A system of node equations is provided, including at least...

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Bibliographic Details
Main Authors MOROZ, Victor, SMITH, Stephen Lee
Format Patent
LanguageEnglish
French
German
Published 18.04.2018
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:Roughly described, a system for simulating a temporal process in a body includes a meshing module to impose a grid of nodes on the body, the grid having a uni-form node spacing which is less than the quantum separa-tion distance in silicon. A system of node equations is provided, including at least one node equation for each of a plurality of nodes of the grid. The node equations describe behavior of at least one physical quantity at that node through each time step of the process. An iterati ng module iterates through the time steps to determi ne val ues for physical quantities of the body at the end of the simulation peri-od. Preferably one particle of the body is assigned to each node of the grid. For moving boundary processes, boundary movement can be represented simply by changing the particle type assigned to various nodes of the grid as the boundary advances.
Bibliography:Application Number: EP20150839015