ANTIMONIDE-BASED HIGH BANDGAP TUNNEL JUNCTION FOR SEMICONDUCTOR DEVICES

A tunnel junction for a semiconductor device is disclosed. The tunnel junction includes a n-doped tunnel layer and a p-doped tunnel layer. The p-doped tunnel layer is constructed of aluminum gallium arsenide antimonide (AlGaAsSb). A semiconductor device including the tunnel junction with the p-doped...

Full description

Saved in:
Bibliographic Details
Main Authors HADDAD, Moran, CHIU, Philip T, KING, Richard R
Format Patent
LanguageEnglish
French
German
Published 08.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A tunnel junction for a semiconductor device is disclosed. The tunnel junction includes a n-doped tunnel layer and a p-doped tunnel layer. The p-doped tunnel layer is constructed of aluminum gallium arsenide antimonide (AlGaAsSb). A semiconductor device including the tunnel junction with the p-doped tunnel layer constructed of AlGaAsSb is also disclosed.
Bibliography:Application Number: EP20160178410