MEMRISTOR AND METHOD OF PRODUCTION THEREOF

A device is disclosed which comprises a first electrode (101), a second electrode (104) spaced from the first electrode, a switching region (102) positioned between the first electrode and the second electrode, and an intermediate region (103) positioned between the switching region and the second e...

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Main Authors BAILEY, Mark, BESSONOV, Alexander Alexandrovich, PETUKHOV, Dmitrii Igorevich, KIRIKOVA, Marina Nikolaevna, RYHANEN, Tapani
Format Patent
LanguageEnglish
French
German
Published 08.03.2017
Subjects
BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A device is disclosed which comprises a first electrode (101), a second electrode (104) spaced from the first electrode, a switching region (102) positioned between the first electrode and the second electrode, and an intermediate region (103) positioned between the switching region and the second electrode, wherein the intermediate region is in electrical contact with the switching region and the second electrode. Preferably, the intermediate region comprises metal nanowires (105) in a polymer matrix, and the device is a memristor or a memcapacitor. In the latter case, the switching region comprises a conductive material (106) and an insulating material (107).
Bibliography:Application Number: EP20140812821