BONDING WIRE FOR SEMICONDUCTOR DEVICE

There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and...

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Bibliographic Details
Main Authors OYAMADA, Tetsuya, DEAI, Hiroyuki, UNO, Tomohiro
Format Patent
LanguageEnglish
French
German
Published 06.12.2023
Subjects
ALLOYS
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FERROUS OR NON-FERROUS ALLOYS
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
METALLURGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SOLDERING OR UNSOLDERING
TRANSPORTING
TREATMENT OF ALLOYS OR NON-FERROUS METALS
WELDING
WORKING BY LASER BEAM
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Summary:There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt.% relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 µm.
Bibliography:Application Number: EP20150782477