BONDING WIRE FOR SEMICONDUCTOR DEVICE
There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and...
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Main Authors | , , |
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Format | Patent |
Language | English French German |
Published |
14.03.2018
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Subjects | |
Online Access | Get full text |
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Summary: | There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt.% relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 µm. |
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Bibliography: | Application Number: EP20150782477 |