HIGH-POWER LASER DIODE PACKAGING METHOD AND LASER DIODE MODULE

In both aspects of the disclosure, a temperature of a p-n junction of the laser diode remains substantially constant within a 0 to 2° C. temperature range through a predetermined amount of several hundred of repeated thermo-cycles which is indicative of uncompromised integrity of the soft solder.

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Bibliographic Details
Main Authors KOMISSAROV, Alexey, TRUBENKO, Pavel, MIFTAKHUTDINOV, Dmitriy, BERISHEV, Igor, STRUGOV, Nikolai
Format Patent
LanguageEnglish
French
German
Published 08.02.2017
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:In both aspects of the disclosure, a temperature of a p-n junction of the laser diode remains substantially constant within a 0 to 2° C. temperature range through a predetermined amount of several hundred of repeated thermo-cycles which is indicative of uncompromised integrity of the soft solder.
Bibliography:Application Number: EP20150774143