MAGNETIC DOMAIN WALL LOGIC DEVICES AND INTERCONNECT

Described is an apparatus which comprises: first, second, and third free magnetic layers; a first metal layer of first material coupled to the first and third free magnetic layers; and a second metal layer of second material different from the first material, the second metal layer coupled to the se...

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Bibliographic Details
Main Authors NIKONOV, Dmitri E, MANIPATRUNI, Sasikanth, YOUNG, Ian A
Format Patent
LanguageEnglish
French
German
Published 14.02.2018
Subjects
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Summary:Described is an apparatus which comprises: first, second, and third free magnetic layers; a first metal layer of first material coupled to the first and third free magnetic layers; and a second metal layer of second material different from the first material, the second metal layer coupled to the second and third free magnetic layers. Described is an STT majority gate device which comprises: a free magnetic layer in a ring; and first, second, third, and fourth free magnetic layers coupled to the free magnetic layer.
Bibliography:Application Number: EP20140887532