GAS BARRIER LAMINATE
A gas barrier laminate 10 having a very thin metal oxide film (ALD film) 5 formed on an inorganic oxide layer 3 by an atomic layer deposition method, the inorganic oxide layer 3 including a metal oxide or a metal oxynitride that contains at least either Si or Al, and a ratio (d1/d2) of a thickness d...
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Main Authors | , , , |
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Format | Patent |
Language | English French German |
Published |
11.01.2017
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Subjects | |
Online Access | Get full text |
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Summary: | A gas barrier laminate 10 having a very thin metal oxide film (ALD film) 5 formed on an inorganic oxide layer 3 by an atomic layer deposition method, the inorganic oxide layer 3 including a metal oxide or a metal oxynitride that contains at least either Si or Al, and a ratio (d1/d2) of a thickness dl of the inorganic oxide layer 3 and a thickness d2 of the ALD film 5 being 3 to 50. The gas barrier laminate features not only a high degree of gas-barrier property but also excellent productivity. |
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Bibliography: | Application Number: EP20150758675 |