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Summary:A gas barrier laminate 10 having a very thin metal oxide film (ALD film) 5 formed on an inorganic oxide layer 3 by an atomic layer deposition method, the inorganic oxide layer 3 including a metal oxide or a metal oxynitride that contains at least either Si or Al, and a ratio (d1/d2) of a thickness dl of the inorganic oxide layer 3 and a thickness d2 of the ALD film 5 being 3 to 50. The gas barrier laminate features not only a high degree of gas-barrier property but also excellent productivity.
Bibliography:Application Number: EP20150758675