LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE

A light-emitting device (100) includes a photoluminescent layer (110), a light-transmissive layer (120) located on or near the photoluminescent layer (110), and a submicron structure that is formed on at least one of the photoluminescent layer (110) and the light-transmissive layer (120) and extends...

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Bibliographic Details
Main Authors HIRASAWA, Taku, INADA, Yasuhisa, HASHIYA, Akira, YAMAKI, Takeyuki, NITTA, Mitsuru
Format Patent
LanguageEnglish
French
German
Published 18.01.2017
Subjects
BASIC ELECTRIC ELEMENTS
BLASTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMSTHEREOF
HEATING
LIGHTING
MECHANICAL ENGINEERING
SEMICONDUCTOR DEVICES
STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHERARTICLES, NOT OTHERWISE PROVIDED FOR
WEAPONS
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Summary:A light-emitting device (100) includes a photoluminescent layer (110), a light-transmissive layer (120) located on or near the photoluminescent layer (110), and a submicron structure that is formed on at least one of the photoluminescent layer (110) and the light-transmissive layer (120) and extends in a plane of the photoluminescent layer (110) or the light-transmissive layer (120). The submicron structure has projections or recesses, light emitted from the photoluminescent layer (110) includes first light having a wavelength » a in air, and the distance D int between adjacent projections or recesses and the refractive index n wav-a of the photoluminescent layer (110) for the first light satisfy » a /n wav-a < D int < » a .
Bibliography:Application Number: EP20140883764