SOLID STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID STATE IMAGING DEVICE, AND IMAGING SYSTEM

A manufacturing method of a solid state imaging device according to one embodiment includes the steps of forming, on a substrate, a gate electrode of a first transistor and a gate electrode of a second transistor adjacent to the first transistor; forming an insulator film covering the gate electrode...

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Bibliographic Details
Main Authors SEKINE, Yasuhiro, NAKATSUKA, Shunsuke, ITAHASHI, Masatsugu, ISOBE, Mari, SUZUKI, Sho
Format Patent
LanguageEnglish
French
German
Published 14.03.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A manufacturing method of a solid state imaging device according to one embodiment includes the steps of forming, on a substrate, a gate electrode of a first transistor and a gate electrode of a second transistor adjacent to the first transistor; forming an insulator film covering the gate electrode of the first transistor and the gate electrode of the second transistor such that a void is formed between the gate electrode of the first transistor and the gate electrode of the second transistor; forming a film on the insulator film; and forming a light shielding member by removing a part of the film by an etching.
Bibliography:Application Number: EP20160170126