WAVELENGTH CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE

A structure according to embodiments of the invention includes a light emitting device for emitting light having a first peak wavelength. A wavelength converting layer is disposed in a path of light emitted by the light emitting device. The wavelength converting layer absorbs light emitted by the li...

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Bibliographic Details
Main Authors KMETEC, Jeffrey Dellert, SHCHEKIN, Oleg Borisovich, MORAN, Brendan Jude, BASIN, Grigoriy
Format Patent
LanguageEnglish
French
German
Published 27.03.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A structure according to embodiments of the invention includes a light emitting device for emitting light having a first peak wavelength. A wavelength converting layer is disposed in a path of light emitted by the light emitting device. The wavelength converting layer absorbs light emitted by the light emitting device and emits light having a second peak wavelength. The wavelength converting layer includes a mixture of a wavelength converting material, a transparent material, and an adhesive material, wherein the adhesive material is no more than 15% of the weight of the wavelength converting layer.
Bibliography:Application Number: EP20140830664