CIRCUIT ARRANGEMENT FOR THE GENERATION OF A BANDGAP REFERENCE VOLTAGE

• Main Authors: CHIRICOSTA, Mario, IPPOLITO, Calogero Marco
• Format: Patent
• Language: English; French; German
• Published: 19.04.2023
• Subjects: CONTROLLING; PHYSICS; REGULATING; SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES

A circuit arrangement for the generation of a bandgap voltage reference in CMOS technology, of the type that includes a circuit module (101; 101') for generation of a base-emitter voltage difference comprising at least one pair of PNP bipolar substrate transistors, which comprises a first bipolar substrate transistor (Q1) inserted in a first circuit branch (B1) that identifies a first current path (11) from the supply voltage (Vdd) to ground (GND), and a second bipolar substrate transistor (Q2) inserted in a second circuit branch (B2) that identifies a second current path (12) from the supply voltage (Vdd) to ground (GND), said first bipolar substrate transistor (Q1) and second bipolar substrate transistor (Q2) being connected together via their base electrode, and the second transistor (Q2) having an aspect ratio (N) higher than that of the first transistor (Q), said circuit arrangement (100; 200; 200'; 200"; 300; 300'; 300"; 400; 400'; 400") comprising a first CMOS current mirror (102; 402; 402') of an n type, connected between said first branch (B1) and said second branch (B2) and connected via a resistance (R1) for adjustment of the bandgap reference voltage to the second bipolar transistor (Q1), a second CMOS current mirror (103; 103'; 403, 403") of a p type, connected between said first branch (B1) and said second branch (B2), said first current mirror (102; 402; 402') and second current mirror (103; 103'; 403, 403") being connected so that each current mirror repeats the current of the other. Said circuit module (101) for generation of a base-emitter voltage difference comprises just said first bipolar substrate transistor (Q1) inserted in the first circuit branch (B1) and said second bipolar substrate transistor (Q2) inserted in the second circuit branch (B2), the current that flows in said circuit arrangement (100; 200; 200'; 200"; 300; 300'; 300"; 400; 400'; 400") from the supply voltage (Vdd) to ground (GND) flowing only through said first bipolar substrate transistor (Q1) and said second bipolar substrate transistor (Q2).