SPLIT-GATE POWER SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

The present invention generally relates to a structure and manufacturing of a power field effect transistor (FET). The present invention provides a planar power metal oxide semiconductor field effect transistor (MOSFET) structure and an insulated gate bipolar transistor (IGBT) structure comprising a...

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Bibliographic Details
Main Authors SIN, Johnny Kin On, NG, Chun Wai, LIANG, Jiajin
Format Patent
LanguageEnglish
French
German
Published 23.09.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention generally relates to a structure and manufacturing of a power field effect transistor (FET). The present invention provides a planar power metal oxide semiconductor field effect transistor (MOSFET) structure and an insulated gate bipolar transistor (IGBT) structure comprising a split gate and a semi-insulating field plate. The present invention also provides manufacturing methods of the structures.
Bibliography:Application Number: EP20140875355