W-NI SPUTTER TARGET

A process for producing a W-Ni sputtering target includes providing the sputtering target with 45 to 75 wt % W and a remainder of Ni and common impurities. The sputtering target contains a Ni(W) phase, a W phase and no or less than 10% by area on average of intermetallic phases measured at a target...

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Bibliographic Details
Main Authors LINKE, Christian, SCHERER, Thomas
Format Patent
LanguageEnglish
French
German
Published 26.10.2016
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Summary:A process for producing a W-Ni sputtering target includes providing the sputtering target with 45 to 75 wt % W and a remainder of Ni and common impurities. The sputtering target contains a Ni(W) phase, a W phase and no or less than 10% by area on average of intermetallic phases measured at a target material cross section.
Bibliography:Application Number: EP20140838908