THIN FILM TRANSISTOR ARRAY AND PRODUCTION METHOD THEREFOR

• Main Author: MATSUBARA, Ryohei
• Format: Patent
• Language: English; French; German
• Published: 07.06.2017
• Subjects: ADVERTISING; BASIC ELECTRIC ELEMENTS; CRYPTOGRAPHY; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DISPLAY; DISPLAYING; EDUCATION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; LABELS OR NAME-PLATES; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEALS; SEMICONDUCTOR DEVICES; SIGNS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

A thin film transistor array provided with thin film transistors arranged in a matrix. Each of the thin film transistor includes a gate electrode formed on a substrate; a gate insulation layer formed on the gate electrode; a source electrode and a drain electrode connected to a pixel electrode, formed on the gate insulation layer; a semiconductor layer formed between the source electrode and the drain electrode; an interlayer insulation film formed so as to cover the source electrode, the drain electrode, the semiconductor layer and a part of the pixel electrode; and an upper pixel electrode formed on the interlayer insulation film, the upper pixel electrode being connected to the pixel electrode. The gate electrode is connected to a gate wiring and the source electrode is connected to a source wiring and the interlayer insulation film has a concave portion.