LOW NOISE InGaAs PHOTODIODE ARRAY

A photodiode pixel structure for imaging short wave infrared (SWIR) and visible light built in a planar structure and may be used for one dimensional and two dimensional photodiode arrays. The photodiode arrays may be hybridized to a read out integrated circuit (ROIC), for example, a silicon complem...

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Bibliographic Details
Main Author ETTENBERG, Martin, H
Format Patent
LanguageEnglish
French
German
Published 05.04.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A photodiode pixel structure for imaging short wave infrared (SWIR) and visible light built in a planar structure and may be used for one dimensional and two dimensional photodiode arrays. The photodiode arrays may be hybridized to a read out integrated circuit (ROIC), for example, a silicon complementary metal-oxide-semiconductor (CMOS) circuit. The photodiode in each pixel is buried under the surface and does not directly contact the ROIC amplification circuit. Disconnecting the photodiode from the ROIC amplification circuit enables low dark current as well as double correlated sampling in the pixel.
Bibliography:Application Number: EP20140849578