BIPOLAR NON-PUNCH-THROUGH POWER SEMICONDUCTOR DEVICE

The wafer comprises an inner region wand an outer region surrounding the inner region. The drift layer has a thickness in the inner region greater or equal than a thickness in the outer region. A thickness of the first layer increases in a transition region between the inner region and the outer reg...

Full description

Saved in:
Bibliographic Details
Main Authors VOBECKY, Jan, BOTAN, Virgiliu, STIEGLER, Karlheinz
Format Patent
LanguageEnglish
French
German
Published 04.10.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The wafer comprises an inner region wand an outer region surrounding the inner region. The drift layer has a thickness in the inner region greater or equal than a thickness in the outer region. A thickness of the first layer increases in a transition region between the inner region and the outer region from a thickness in the inner region to a maximum thickness in the outer region. The thickness of the first layer increases linearly over the transition region with a width of the transition region greater than 5 times a thickness of the first section of the first layer.
Bibliography:Application Number: EP20140747388