HIGH-ELECTRON-MOBILITY TRANSISTORS

• Main Authors: RAMDANI, JAMAL, LIU, LINLIN, KUDYMOV, ALEXEY
• Format: Patent
• Language: English; French; German
• Published: 28.09.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

High-electron-mobility transistors that include field plates are described. In a first implementation, a HEMT includes a first (105) and a second (110) semiconductor material disposed to form a heterojunction (115) at which a two-dimensional electron gas (120) arises and source (125), drain (130), and gate (135) electrodes. The gate electrode is disposed to regulate conduction in the heterojunction between the source electrode and the drain electrode. The gate has a drain-side edge. A gate-connected field plate (140) is disposed above a drain-side edge of the gate electrode and extends laterally toward the drain. A second field plate (145) is disposed above a drain-side edge of the gate-connected field plate and extends laterally toward the drain.