POLYCRYSTALLINE SILICON FRAGMENTS AND PROCESS FOR COMMINUTING POLYCRYSTALLINE SILICON RODS

• Main Authors: GRUEBL, PETER, PECH, REINER
• Format: Patent
• Language: English; French; German
• Published: 29.06.2016
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; COMPOUNDS THEREOF; CRUSHING, PULVERISING, OR DISINTEGRATING; CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; CRYSTAL GROWTH; INORGANIC CHEMISTRY; METALLURGY; MILLING GRAIN; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; PREPARATORY TREATMENT OF GRAIN FOR MILLING; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Comminuted polysilicon with reduced contamination is prepared using multi-step comminution employing comminution with comminution tools of differing tungsten carbide content and/or grain size.