POLYCRYSTALLINE SILICON FRAGMENTS AND PROCESS FOR COMMINUTING POLYCRYSTALLINE SILICON RODS

Comminuted polysilicon with reduced contamination is prepared using multi-step comminution employing comminution with comminution tools of differing tungsten carbide content and/or grain size.

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Bibliographic Details
Main Authors GRUEBL, PETER, PECH, REINER
Format Patent
LanguageEnglish
French
German
Published 29.06.2016
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
COMPOUNDS THEREOF
CRUSHING, PULVERISING, OR DISINTEGRATING
CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL
CRYSTAL GROWTH
INORGANIC CHEMISTRY
METALLURGY
MILLING GRAIN
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
PREPARATORY TREATMENT OF GRAIN FOR MILLING
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TRANSPORTING
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:Comminuted polysilicon with reduced contamination is prepared using multi-step comminution employing comminution with comminution tools of differing tungsten carbide content and/or grain size.
Bibliography:Application Number: EP20140752592