SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

There is provided a substrate processing method, comprising: (a) loading a substrate into a processing vessel having a pre-baked film containing a silazane bond; (b) heating the substrate to a first temperature and supplying a process gas to the heated substrate; and (c) heating the substrate to whi...

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Bibliographic Details
Main Authors KAKUDA TORU, TATENO HIDETO, KUROKAWA MASAMICHI, JODA TAKUYA, OKUNO MASAHISA
Format Patent
LanguageEnglish
French
German
Published 08.06.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:There is provided a substrate processing method, comprising: (a) loading a substrate into a processing vessel having a pre-baked film containing a silazane bond; (b) heating the substrate to a first temperature and supplying a process gas to the heated substrate; and (c) heating the substrate to which the process gas has been supplied, to a second temperature which is higher than the first temperature and less than or equal to a temperature at which the pre-bake has been performed.
Bibliography:Application Number: EP20140831930