METHOD FOR MANUFACTURING A COMPONENT-EMBEDDED SUBSTRATE, AND A COMPONENT-EMBEDDED SUBSTRATE
In a method for manufacturing a device embedded substrate (20), a conductive via (16) that penetrates a first insulating layer (5) and a second insulating layer (11) from an outer metal layer (14) to reach a second terminal (4b) of an IC device (4) is formed after forming the outer metal layer (14).
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Main Authors | , , |
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Format | Patent |
Language | English French German |
Published |
08.07.2020
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Subjects | |
Online Access | Get full text |
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Summary: | In a method for manufacturing a device embedded substrate (20), a conductive via (16) that penetrates a first insulating layer (5) and a second insulating layer (11) from an outer metal layer (14) to reach a second terminal (4b) of an IC device (4) is formed after forming the outer metal layer (14). |
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Bibliography: | Application Number: EP20130884904 |