METHOD FOR MANUFACTURING A COMPONENT-EMBEDDED SUBSTRATE, AND A COMPONENT-EMBEDDED SUBSTRATE

In a method for manufacturing a device embedded substrate (20), a conductive via (16) that penetrates a first insulating layer (5) and a second insulating layer (11) from an outer metal layer (14) to reach a second terminal (4b) of an IC device (4) is formed after forming the outer metal layer (14).

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Bibliographic Details
Main Authors TODA, MITSUAKI, MURATA, SEIKO, MATSUMOTO, TOHRU
Format Patent
LanguageEnglish
French
German
Published 23.03.2016
Subjects
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Summary:In a method for manufacturing a device embedded substrate (20), a conductive via (16) that penetrates a first insulating layer (5) and a second insulating layer (11) from an outer metal layer (14) to reach a second terminal (4b) of an IC device (4) is formed after forming the outer metal layer (14).
Bibliography:Application Number: EP20130884904