SEMICONDUCTOR DEVICE

• Main Authors: IIJIMA, RYOSUKE, OHASHI, TERUYUKI, SHIMIZU, TATSUO, SHINOHE, TAKASHI
• Format: Patent
• Language: English; French; German
• Published: 23.03.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device according to an embodiment includes a SiC layer including a first region provided at a surface. The first region satisfies N A - N D < 5 × 10 15 cm -3 when a concentration of a p-type impurity is denoted by N A , whereas a concentration of an n-type impurity is denoted by N...