SEMICONDUCTOR DEVICE

A semiconductor device according to an embodiment includes a SiC layer including a first region provided at a surface. The first region satisfies N A - N D < 5 × 10 15 cm -3 when a concentration of a p-type impurity is denoted by N A , whereas a concentration of an n-type impurity is denoted by N...

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Main Authors IIJIMA, RYOSUKE, OHASHI, TERUYUKI, SHIMIZU, TATSUO, SHINOHE, TAKASHI
Format Patent
LanguageEnglish
French
German
Published 23.03.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device according to an embodiment includes a SiC layer including a first region provided at a surface. The first region satisfies N A - N D < 5 × 10 15 cm -3 when a concentration of a p-type impurity is denoted by N A , whereas a concentration of an n-type impurity is denoted by N D . The surface is inclined at 0 degrees or more and 10 degrees or less to a {000-1} face, or the surface having a normal direction inclined at 80 degrees or more and 90 degrees or less to a <000-1> direction. The device includes a gate electrode, a gate insulating film provided between the SiC layer and the gate electrode, and a second region provided between the first region and the gate insulating film. The second region has a nitrogen concentration higher than 1 × 10 22 cm -3 .
Bibliography:Application Number: EP20150173935