SYNCHRONOUS MIRRORING IN NON-VOLATILE MEMORY SYSTEMS

First data is received for storing in a first asymmetric memory device. A first writing phase is identified as a current writing phase. A first segment included in the first asymmetric memory device is identified as next segment available for writing data. The first data is written to the first segm...

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Bibliographic Details
Main Authors MONDAL, SHIBABRATA, KARAMCHETI, VIJAY, GOWDA, SWAMY
Format Patent
LanguageEnglish
French
German
Published 20.01.2016
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
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Summary:First data is received for storing in a first asymmetric memory device. A first writing phase is identified as a current writing phase. A first segment included in the first asymmetric memory device is identified as next segment available for writing data. The first data is written to the first segment. Information associated with the first segment is stored, along with information indicating that the first segment is written in the first writing phase. Second data is received for storing in the asymmetric memory. A second segment included in the first asymmetric memory device is identified as the next segment available for writing data. The second data is written to the second segment. Information associated with the second segment and the second memory block is stored along with information indicating that the second segment is written in the second writing phase.
Bibliography:Application Number: EP20140768560