EUV MIRROR AND OPTICAL SYSTEM COMPRISING EUV MIRROR

An EUV mirror with a substrate and a multilayer arrangement including: a periodic first layer group having N1>1 first layer pairs of period thickness P1 and arranged on a radiation entrance side of the multilayer arrangement; a periodic second layer group having N2>1 second layer pairs of peri...

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Bibliographic Details
Main Authors SCHICKETANZ, THOMAS, PAUL, HANS-JOCHEN, ZACZEK, CHRISTOPH
Format Patent
LanguageEnglish
French
German
Published 18.11.2015
Subjects
GAMMA RAY OR X-RAY MICROSCOPES
IRRADIATION DEVICES
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
PHYSICS
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Summary:An EUV mirror with a substrate and a multilayer arrangement including: a periodic first layer group having N1>1 first layer pairs of period thickness P1 and arranged on a radiation entrance side of the multilayer arrangement; a periodic second layer group having N2>1 second layer pairs of period thickness P2 and arranged between the first layer group and the substrate; and a third layer group having N3 third layer pairs arranged between the first and second layer groups. N1>N2. The third layer group has a third period thickness P3 which deviates from an average period thickness PM=(P1+P2)/2 by a period thickness difference ΔP. ΔP corresponds to the quotient of the optical layer thickness (λ/4) of a quarter-wave layer and the product of N3 and cos(AOIM), AOIM being the mean incidence angle for which the multilayer arrangement is designed.
Bibliography:Application Number: EP20130799616