Semiconductor device and manufacturing method

A semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact to the at least one active layer, the first contact comprising a metal (28) in contact with the at least one active layer and a capping layer (32) on the metal, the capping layer comprising a...

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Bibliographic Details
Main Authors HEIL, STEPHAN, BASTIAAN, SIMON, DONKERS, JOHANNES,JOSEPHUS, THEODORUS, MARINUS, SONSKY, JAN
Format Patent
LanguageEnglish
French
German
Published 11.11.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact to the at least one active layer, the first contact comprising a metal (28) in contact with the at least one active layer and a capping layer (32) on the metal, the capping layer comprising a diffusion barrier, wherein the capping layer is patterned to form a pattern comprising regions of the contact covered by the capping layer and regions of the contact that are uncovered.
Bibliography:Application Number: EP20140176489