Resistive random access memory and method of fabricating the same

A resistive random access memory includes a first electrode layer (102), a second electrode layer (110), and a stacked structure (104) disposed between the first electrode layer and the second electrode layer. The stacked structure includes a conductive layer (106) and a resistance variable layer (1...

Full description

Saved in:
Bibliographic Details
Main Authors Chang, Shuo-Che, Ho, Chia-Hua
Format Patent
LanguageEnglish
French
German
Published 20.06.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A resistive random access memory includes a first electrode layer (102), a second electrode layer (110), and a stacked structure (104) disposed between the first electrode layer and the second electrode layer. The stacked structure includes a conductive layer (106) and a resistance variable layer (108). The material of the conductive layer includes HfO x , the material of the resistance variable layer includes HfO y , and x < y. Additionally, the diffusion rate of oxygen ions in the conductive layer is lower than the diffusion rate of the oxygen ions in metal.
Bibliography:Application Number: EP20140186834