NORMAL TEMPERATURE BONDING DEVICE, WAFER HAVING NORMAL TEMPERATURE BONDING DEVICE, AND NORMAL TEMPERATURE BONDING METHOD

• Main Authors: TSUTSUMI KEIICHIRO, TSUNO TAKESHI, IDE KENSUKE, GOTO TAKAYUKI, KINOUCHI MASATO
• Format: Patent
• Language: English; French; German
• Published: 07.10.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; MICROSTRUCTURAL TECHNOLOGY; PERFORMING OPERATIONS; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; TRANSPORTING; WELDING; WORKING BY LASER BEAM

A room-temperature bonded device has a first substrate having a first surface and a second substrate having a second surface to be bonded to the first surface. In the bonding of the first surface and the second surface, one of the first surface and the second surface contains an inorganic material such as silicon, SiO 2 , GaN and LiTaO 3 . The other of the first surface and the second surface contains an inorganic material such as silicon, SiO 2 , quartz and Au. The inorganic materials of the first surface and the second surface may be same or may be different.