EPITAXIAL GROWTH APPARATUS

• Main Authors: MORI, YOSHINOBU, OKABE, AKIRA
• Format: Patent
• Language: English; French; German
• Published: 13.07.2016
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

An epitaxial growth apparatus is provided having an improved growing speed. This epitaxial growth apparatus is provided with: a reaction chamber that is demarcated by means of a substrate placing section having a substrate placed thereon, a ceiling plate having light permeability, and sidewall sections; a heating means, which is disposed outside of the reaction chamber, and which heats the substrate through the ceiling plate, said substrate being placed in the reaction chamber; and a reaction gas introducing means, which introduces into the reaction chamber a reaction gas in parallel to the horizontal direction of the substrate. The distance between the center of the ceiling plate and the substrate placing section is less than 10 mm.