NANOPYRAMID SIZED OPTO-ELECTRONIC STRUCTURE AND METHOD FOR MANUFACTURING OF SAME

Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanopyrami...

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Bibliographic Details
Main Authors GARDNER, NATHAN, KRYLIOUK, OLGA, VESCOVI, GIULIANO, PORTILHO
Format Patent
LanguageEnglish
French
German
Published 29.07.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanopyramids are grown utilizing a CVD based selective area growth technique. The nanopyramids are grown directly or as core-shell structures.
Bibliography:Application Number: EP20130839487