N-doped semiconducting material comprising phosphine oxide matrix and metal dopant

The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising th...

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Main Authors Angermann, Jens, Rothe, Carsten, Zöllner, Mike, Denker, Ulrich, Gilge, Kai, Kalisz, Tomas, Canzler, Tobias, Werner, Ansgar, Rosenow, Thomas, Bloom, Francisco, Birnstock, Jan, Fadhel, Omrane
Format Patent
LanguageEnglish
French
German
Published 24.06.2015
Subjects
ELECTRICITY
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Summary:The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.
Bibliography:Application Number: EP20140171326