Memory device based on anisotropic magentoresistance

A memory device is described. The memory device comprises an antiferromagnet (17; 107). The device may comprise an insulator (18) and an electrode (19) arranged in a tunnel junction configuration (20). Alternatively, the device may comprise first and second contacts to the antiferromagnet for measur...

Full description

Saved in:
Bibliographic Details
Main Authors JUNGWIRTH, TOMAS, WUNDERLICH, JOERG, MARTI, XAVIER
Format Patent
LanguageEnglish
French
German
Published 10.06.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:A memory device is described. The memory device comprises an antiferromagnet (17; 107). The device may comprise an insulator (18) and an electrode (19) arranged in a tunnel junction configuration (20). Alternatively, the device may comprise first and second contacts to the antiferromagnet for measuring ohmic resistance of the antiferromagnet. The antiferromagnet is not coupled to any ferromagnet. The state of the antiferromagnet can be set by heating the junction to a temperature at or above a critical temperature at which is possible to re-orientate magnetic moments in the antiferromagnet, applying an external magnetic field and then cooling the antiferromagnet to a temperature below the critical temperature.
Bibliography:Application Number: EP20130196118