AMPLIFIER CIRCUIT WITH CROSS WIRING OF DIRECT-CURRENT SIGNALS AND MICROWAVE SIGNALS

• Main Authors: TAO, HONGQI, ZHANG, BIN
• Format: Patent
• Language: English; French; German
• Published: 01.04.2015
• Subjects: AMPLIFIERS; BASIC ELECTRIC ELEMENTS; BASIC ELECTRONIC CIRCUITRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Disclosed is an amplifier circuit with cross wiring of direct-current signals and microwave signals. The circuit includes a circuit network unit formed of a direct-current feeding circuit and a microwave power signal circuit. The direct-current feeding circuit starts from a high-electron-mobility transistor (HEMT) drain power-up bonding point (211), and is connected to a feeding end of a tail-level HEMT transistor core (250) via a corresponding line after being connected to a first Metal-Insulator-Metal (MIM) capacitor (221) in parallel, and connected to a first micro-strip inductor (222) and symmetrical branch micro-strips (223) in series, the branch micro-strips (223) being connected to one of electrodes of second MIM capacitors (231, 234) in series. The microwave power signal circuit starts from a signal end of the tail-level HEMT transistor core (250), is combined into two paths by a corresponding line, the two paths being respectively connected to two third MIM capacitors (241, 242) in parallel, being respectively connected to the other electrode of the second MIM capacitors (231, 234) in series, being respectively connected to ground micro-strip inductors (232, 235) in parallel and respectively connected to second micro-strip inductors (233, 236) in series, and being combined into one path to be connected to a third micro-strip inductor (238), and is output by a fourth MIM capacitor (239) connected in parallel. This solution reduces the tuning allowance of a matching network, improves the output impedance of a combined port, improves a chip space utilization rate, improves heat dissipation performance, and improves power density.