ELECTRIC POWER SEMICONDUCTOR DEVICE
A power semiconductor device includes: a mold unit that includes a power semiconductor element, a base plate, and a mold unit, the power semiconductor element being mounted on one surface of the base plate, a convex portion being formed on an other surface of the base plate, the convex portion inclu...
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Main Authors | , , , |
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Format | Patent |
Language | English French German |
Published |
01.04.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A power semiconductor device includes: a mold unit that includes a power semiconductor element, a base plate, and a mold unit, the power semiconductor element being mounted on one surface of the base plate, a convex portion being formed on an other surface of the base plate, the convex portion including a plurality of grooves, the power semiconductor element being sealed with the mold resin in such a manner as to expose the convex portion; a plurality of radiation fins inserted into the grooves, respectively, and fixedly attached to the base plate by swaging; and a metal plate (3) that includes a opening (31) into which the convex portion is inserted, the metal plate being arranged between the mold unit and the radiation fins with the convex portion inserted into the opening (31), wherein the metal plate (3) includes a protrusion (32) that protrudes from an edge of the opening (31) and that digs into a side surface of the convex portion when the convex portion is inserted into the opening (31). |
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Bibliography: | Application Number: EP20120856575 |