CTE MATCHED INTERPOSER AND METHOD OF MAKING

The present interposer makes it possible to tailor the coefficient of thermal expansion of the interposer to match components to be attached thereto within very wide ranges. The semiconductor interposer, includes a substrate of a semiconductor material having a first side and an opposite second side...

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Bibliographic Details
Main Authors EBEFORS, THORBJÖRN, PERTTU, DANIEL
Format Patent
LanguageEnglish
French
German
Published 20.01.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present interposer makes it possible to tailor the coefficient of thermal expansion of the interposer to match components to be attached thereto within very wide ranges. The semiconductor interposer, includes a substrate of a semiconductor material having a first side and an opposite second side. There is at least one conductive wafer-through via including metal. At least one recess is provided in the first side of the substrate and in the semiconductor material of the substrate, the recess being filled with metal and connected with the wafer-through via providing a routing structure. The exposed surfaces of the metal-filled via and metal-filled recess are essentially flush with the substrate surface on the first side of the substrate. The wafer-through via includes a narrow part and a wider part, and contact elements are provided on the routing structure having an aspect ratio, height:diameter, <1:1, preferably 1:1 to 2:1.
Bibliography:Application Number: EP20130775666