Light emitting device and lighting system

Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer (130), an AlGaInP-based active layer (140) on the first conductive semiconductor...

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Bibliographic Details
Main Author HONG, KI YONG
Format Patent
LanguageEnglish
French
German
Published 24.12.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer (130), an AlGaInP-based active layer (140) on the first conductive semiconductor layer (130), a second conductive clad layer (150) on the AlGaInP-based active layer (140), a second conductive GaP layer (162) having first concentration on the second conductive clad layer (150), and a second conductive GaP layer (164) having second concentration higher than the first concentration on the second conductive GaP layer (162) having the first concentration.
Bibliography:Application Number: EP20140172841