Image sensor having metal contact coupled through a contact etch stop layer with an isolation region

An image sensor pixel includes one or more photodiodes (PD) disposed in a semiconductor layer (310). Pixel circuitry (326) is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer (320) is disposed proximate to the semiconductor layer over the pixel circuitr...

Full description

Saved in:
Bibliographic Details
Main Authors CELLEK, ORAY ORKUN, TAI, DYSON H, YANG, DAJIANG, CHEN, GANG, HU, SINGUNG
Format Patent
LanguageEnglish
French
German
Published 19.11.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An image sensor pixel includes one or more photodiodes (PD) disposed in a semiconductor layer (310). Pixel circuitry (326) is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer (320) is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer (322) is disposed over the passivation layer. One or more metal contacts (314) are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions (316) are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled to the pixel circuitry from the one or more photodiodes.
Bibliography:Application Number: EP20140163622