ACCELERATION SENSOR

The present invention provides an acceleration sensor in which rigidity of its movable electrode can be ensured despite a large number of through-holes formed in the movable electrode. The acceleration sensor has an SOI substrate (2) in which a silicon oxide layer (4) is formed on a silicon support...

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Bibliographic Details
Main Authors YAO, HIRONOBU, KISHIRO, MASAMI, SAKAUE, SATORU, SUZUKI, TAKESHI
Format Patent
LanguageEnglish
French
German
Published 11.05.2016
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Summary:The present invention provides an acceleration sensor in which rigidity of its movable electrode can be ensured despite a large number of through-holes formed in the movable electrode. The acceleration sensor has an SOI substrate (2) in which a silicon oxide layer (4) is formed on a silicon support layer (3) and an active silicon layer (5) is formed on the silicon oxide layer, wherein the active silicon layer of the SOI substrate has a movable electrode (11) supported by elastic beams and configured with a weight, and also has fixed electrodes (13a), (13xb), (14ya), (14yb) disposed in a fixed manner around the movable electrode to face the movable electrode, and wherein through-holes (16) penetrating in a Z-axis direction are formed over the entire surface on the inner side of an outer circumference to which the elastic beams (12) of the movable electrode are connected.
Bibliography:Application Number: EP20120849932