ACCELERATION SENSOR
The present invention provides an acceleration sensor in which rigidity of its movable electrode can be ensured despite a large number of through-holes formed in the movable electrode. The acceleration sensor has an SOI substrate (2) in which a silicon oxide layer (4) is formed on a silicon support...
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Main Authors | , , , |
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Format | Patent |
Language | English French German |
Published |
11.05.2016
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention provides an acceleration sensor in which rigidity of its movable electrode can be ensured despite a large number of through-holes formed in the movable electrode. The acceleration sensor has an SOI substrate (2) in which a silicon oxide layer (4) is formed on a silicon support layer (3) and an active silicon layer (5) is formed on the silicon oxide layer, wherein the active silicon layer of the SOI substrate has a movable electrode (11) supported by elastic beams and configured with a weight, and also has fixed electrodes (13a), (13xb), (14ya), (14yb) disposed in a fixed manner around the movable electrode to face the movable electrode, and wherein through-holes (16) penetrating in a Z-axis direction are formed over the entire surface on the inner side of an outer circumference to which the elastic beams (12) of the movable electrode are connected. |
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Bibliography: | Application Number: EP20120849932 |