SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE

• Main Authors: LU, BIN, PALACIOS, TOMAS, APOSTOL, MATIOLI, ELISON DE NAZARETH
• Format: Patent
• Language: English; French; German
• Published: 08.07.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a field effect transistor, comprising: a source region; a drain region; a semiconductor region between the source region and the drain region, the semiconductor region having trenches extending along a direction that extends between the source region and the drain region; a conductive electrode having conductive regions formed in the trenches, the conductive electrode extending no more than a portion of a distance between the source region and the drain region; and an insulating region between the semiconductor region and the conductive electrode, the insulating region extending at least partially across an interface between the semiconductor region and the conductive electrode, wherein the conductive electrode forms a field plate of the field effect transistor.