RESISTIVE SWITCHING DEVICES HAVING ALLOYED ELECTRODES AND METHODS OF FORMATION THEREOF

In accordance with an embodiment of the present invention, a resistive switching device comprises a bottom electrode, a switching layer disposed over the bottom electrode, and a top electrode disposed over the switching layer. The top electrode comprises an alloy of a memory metal and an alloying el...

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Main Authors LEE, WEI TI, GOPALAN, CHAKRAVARTHY, BLANCHARD, PHILIPPE, WANG, JANET, JAMESON, JOHN ROSS, SHIELDS, JEFFREY, KELLAM, MARK, KOUSHAN, FOROOZAN SARAH, MA, YI
Format Patent
LanguageEnglish
French
German
Published 03.06.2015
Subjects
ELECTRICITY
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Summary:In accordance with an embodiment of the present invention, a resistive switching device comprises a bottom electrode, a switching layer disposed over the bottom electrode, and a top electrode disposed over the switching layer. The top electrode comprises an alloy of a memory metal and an alloying element. The top electrode provides a source of the memory metal. The memory metal is configured to change a state of the switching layer.
Bibliography:Application Number: EP20120832202