ADAPTIVE READ WORDLINE VOLTAGE BOOSTING APPARATUS AND METHOD FOR MULTI-PORT SRAM

Embodiments of the invention are directed to systems and methods for adaptively boosting the supply voltage to an SRAM (Static Random Access Memory) in response to process-voltage-temperature variations when needed. Embodiments include a critical path that simulates a typical memory cell and read-ou...

Full description

Saved in:
Bibliographic Details
Main Authors PHAN, Michael ThaiThanh, HOFF, David Paul, NGUYEN, Quan, GARG, Manish
Format Patent
LanguageEnglish
French
German
Published 03.04.2019
Subjects
Online AccessGet full text

Cover

Loading…
Abstract Embodiments of the invention are directed to systems and methods for adaptively boosting the supply voltage to an SRAM (Static Random Access Memory) in response to process-voltage-temperature variations when needed. Embodiments include a critical path that simulates a typical memory cell and read-out circuit in the SRAM. Applying a trigger signal to a word-line input port of the critical path, and comparing the output of the critical path to a reference-latch signal, provides an indication of when to boost the supply voltage to the read-out circuits of the SRAM.
AbstractList Embodiments of the invention are directed to systems and methods for adaptively boosting the supply voltage to an SRAM (Static Random Access Memory) in response to process-voltage-temperature variations when needed. Embodiments include a critical path that simulates a typical memory cell and read-out circuit in the SRAM. Applying a trigger signal to a word-line input port of the critical path, and comparing the output of the critical path to a reference-latch signal, provides an indication of when to boost the supply voltage to the read-out circuits of the SRAM.
Author GARG, Manish
HOFF, David Paul
NGUYEN, Quan
PHAN, Michael ThaiThanh
Author_xml – fullname: PHAN, Michael ThaiThanh
– fullname: HOFF, David Paul
– fullname: NGUYEN, Quan
– fullname: GARG, Manish
BookMark eNqNyr0OgjAQAOAOOvj3DvcCJKIB58Me0KTlmnLgSIipkwESfP-4-ABO3_Lt1Waap7hTHjV6MT1BINTw4KCtaQh6toIVQcHcimkqQO8xoHQtYKPBkdSsoeQArrNiEs9BoA3ojmr7Gt9rPP08KChJ7nUSl3mI6zI-4xQ_A_nLLcuzc1qk1z_KF0pYMHQ
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Physics
DocumentTitleAlternate APPAREIL ET PROCÉDÉ D'AUGMENTATION ADAPTATIVE DE LA TENSION DE LECTURE DE LIGNE DE MOT DE MÉMOIRES SRAM À PORTS MULTIPLES
ADAPTIVER LESEWORTLEITUNGSSPANNUNGSVERSTÄRKER UND VERFAHREN FÜR MULTIPORT-SRAM
ExternalDocumentID EP2756501B1
GroupedDBID EVB
ID FETCH-epo_espacenet_EP2756501B13
IEDL.DBID EVB
IngestDate Fri Jul 26 04:48:13 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
French
German
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_EP2756501B13
Notes Application Number: EP20120766529
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190403&DB=EPODOC&CC=EP&NR=2756501B1
ParticipantIDs epo_espacenet_EP2756501B1
PublicationCentury 2000
PublicationDate 20190403
PublicationDateYYYYMMDD 2019-04-03
PublicationDate_xml – month: 04
  year: 2019
  text: 20190403
  day: 03
PublicationDecade 2010
PublicationYear 2019
RelatedCompanies Qualcomm Incorporated
RelatedCompanies_xml – name: Qualcomm Incorporated
Score 3.1951115
Snippet Embodiments of the invention are directed to systems and methods for adaptively boosting the supply voltage to an SRAM (Static Random Access Memory) in...
SourceID epo
SourceType Open Access Repository
SubjectTerms INFORMATION STORAGE
PHYSICS
STATIC STORES
Title ADAPTIVE READ WORDLINE VOLTAGE BOOSTING APPARATUS AND METHOD FOR MULTI-PORT SRAM
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190403&DB=EPODOC&locale=&CC=EP&NR=2756501B1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3Nb4IwFG-M-7xtbsvcV3pYuJGBFMGDWQqtyiLQYHXeTEFIvKCZLPv31xJ1u2y35jV5aV_y6-vv9b1XAJ5NNzcknoWOHLvQUeGmunC7hp6baVH0kCE6SxWHDKPuaIre5va8AVb7Wpi6T-hX3RxRIiqTeK_q83rzE8QidW7l9iVdSdH6dcD7RNuxY-ndkGFpxOtTFpPY13xfjrQo6asu57ZhepIoHclbtKPAQGeeKkrZ_PYogwtwzKSysroEjbxsgTN___FaC5yGu_fuFjipEzSzrRTuQLi9AgwTzHgwozChmMB3SePGQUThLB5zPKTQi-MJD6IhxIzhBPPpBOKIwJDyUUygZH0wnI55oLM44XCS4PAawAHl_kiXi1wcDLKg7LAd6wY0y3WZ3wKITJFa6hnStTOUFV3h9ERHMRq0zDpCOG3Q_lPN3T9z9-BcWbZOV7EeQLP6-MwfpSeu0qfaht9UJoZk
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NT8IwFG-IX3hT1IifPZjdFjfWMTgQ062FTffRjILcSDe2hMsgMuO_b7cAetFb0yYvfS_59fX33usrAE96L9MknoWKLDNXUd5LVNHramqmJ3neR5roLKo4ZBB23Ql6nZmzBlju3sLUfUK_6uaIElGpxHtZn9frnyAWqWsrN8_JUk6tXoZ8QJQtO5beDWmGQuwBZRGJHMVx5EgJ40HV5dzUdFsSpUN5w7YqMNCpXT1KWf_2KMMzcMSksKI8B42saIGms_t4rQVOgm2-uwWO6wLNdCMntyDcXACGCWbcm1IYU0zgu6RxvhdSOI18jkcU2lE05l44gpgxHGM-GUMcEhhQ7kYEStYHg4nPPZVFMYfjGAeXAA4pd1xVbnK-N8icsr06xhU4KFZFdg0g0kViVGnInpmiNO8Kqy86FaNBi7QjhNUG7T_F3Pyz9giaLg_8uVTl7RacVlauS1eMO3BQfnxm99Irl8lDbc9vzf6JVw
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=ADAPTIVE+READ+WORDLINE+VOLTAGE+BOOSTING+APPARATUS+AND+METHOD+FOR+MULTI-PORT+SRAM&rft.inventor=PHAN%2C+Michael+ThaiThanh&rft.inventor=HOFF%2C+David+Paul&rft.inventor=NGUYEN%2C+Quan&rft.inventor=GARG%2C+Manish&rft.date=2019-04-03&rft.externalDBID=B1&rft.externalDocID=EP2756501B1