ADAPTIVE READ WORDLINE VOLTAGE BOOSTING APPARATUS AND METHOD FOR MULTI-PORT SRAM

Embodiments of the invention are directed to systems and methods for adaptively boosting the supply voltage to an SRAM (Static Random Access Memory) in response to process-voltage-temperature variations when needed. Embodiments include a critical path that simulates a typical memory cell and read-ou...

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Bibliographic Details
Main Authors PHAN, Michael ThaiThanh, HOFF, David Paul, NGUYEN, Quan, GARG, Manish
Format Patent
LanguageEnglish
French
German
Published 03.04.2019
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Embodiments of the invention are directed to systems and methods for adaptively boosting the supply voltage to an SRAM (Static Random Access Memory) in response to process-voltage-temperature variations when needed. Embodiments include a critical path that simulates a typical memory cell and read-out circuit in the SRAM. Applying a trigger signal to a word-line input port of the critical path, and comparing the output of the critical path to a reference-latch signal, provides an indication of when to boost the supply voltage to the read-out circuits of the SRAM.
Bibliography:Application Number: EP20120766529