Transistors, methods of manufacturing transistors, and electronic devices including transistors

According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal ox...

Full description

Saved in:
Bibliographic Details
Main Authors RYU, MYUNG-KWAN, KIM, TAE-SANG, SEO, SEOK-JUN, KIM, HYUN-SUK, KIM, SUN-JAE, LEE, SANG-YOON, SEON, JONG-BAEK, PARK, JOON-SEOK, SON, KYOUNG-SEOK
Format Patent
LanguageEnglish
French
German
Published 11.06.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.
Bibliography:Application Number: EP20130195425