Method for electrically connecting wafers using butting contact struture and semiconductor device fabricated through the same

The present invention relates to a method for electrically connecting wafers, which physically bonds two wafers through an oxide-to-oxide bonding method and then electrically connects the two wafers through a butting contact structure. The wafers are physically bonded to each other through a relativ...

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Bibliographic Details
Main Author Jeon, In Gyun
Format Patent
LanguageEnglish
French
German
Published 24.01.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to a method for electrically connecting wafers, which physically bonds two wafers through an oxide-to-oxide bonding method and then electrically connects the two wafers through a butting contact structure. The wafers are physically bonded to each other through a relatively simple method, and then electrically connected to through TSVs or butting contact holes. Therefore, since the fabrication process may be simplified, a process error may be reduced, and the product yield may be improved.
Bibliography:Application Number: EP20130005391