PROCESS FOR THE PREPARATION OF SILICON CARBIDE

A process for manufacturing SiC wherein the emissions of polluting gases are minimized, by reduction of silicon oxide by an excess of carbon, the process including electrically heating a resistor at the heart of a mixture of raw materials consisting of a carbon-based source chosen from petroleum cok...

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Bibliographic Details
Main Authors ALEONARD, Bruno, SCHWARTZ, Matthieu, DI PIERRO, Simonpietro
Format Patent
LanguageEnglish
French
German
Published 15.11.2017
Subjects
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Summary:A process for manufacturing SiC wherein the emissions of polluting gases are minimized, by reduction of silicon oxide by an excess of carbon, the process including electrically heating a resistor at the heart of a mixture of raw materials consisting of a carbon-based source chosen from petroleum cokes and a source of silicon, especially a silica having a purity of greater than 95% of SiO2, in order to give rise, at a temperature above 1500° C., to the simplified reaction: SiO2+3C=SiC+2CO (1), wherein the carbon-based source first undergoes a treatment for removing the contained hydrogen, so that its elemental hydrogen content (EHWC) is less than 2% by weight.
Bibliography:Application Number: EP20120744043