Semiconductor device and method of manufacturing same

To provide a semiconductor device and a manufacturing method thereof achieving both reduction in ON resistance and increase in breakdown voltage and suppressing a short circuit. The semiconductor device has, in its semiconductor substrate having a main surface, a p - type epitaxial region, n - type...

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Bibliographic Details
Main Authors ZHANG, MING, YOSHIHISA, YASUKI
Format Patent
LanguageEnglish
French
German
Published 12.03.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a semiconductor device and a manufacturing method thereof achieving both reduction in ON resistance and increase in breakdown voltage and suppressing a short circuit. The semiconductor device has, in its semiconductor substrate having a main surface, a p - type epitaxial region, n - type epitaxial region, n type offset region, and p type body region configuring a pn junction therewith; and further has a p + type buried region between the p - type and n - type epitaxial regions, isolation trench extending from the main surface to the p + type buried region, and trench sidewall n type region formed on at least a portion of the sidewall of the isolation trench. The n type impurity concentration in the trench sidewall n type region is higher than that in the n - type epitaxial region. The trench sidewall n type region extends along the sidewall to reach the p + type buried region.
Bibliography:Application Number: EP20130183690