SUPERJUNCTION STRUCTURES FOR POWER DEVICES AND METHODS OF MANUFACTURE

A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arrang...

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Bibliographic Details
Main Authors REXER, Christopher L, RIDLEY, Rodney S, REICHL, Dwayne S, HEIDENREICH, Harold, YILMAZ, Hamza, YEDINAK, Josph A, LEE, Jaegil, RINEHIMER, Mark L, YUN, Chongman, PAN, James, SHENOY, Praveen Muraleedharan
Format Patent
LanguageEnglish
French
German
Published 27.05.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.
Bibliography:Application Number: EP20120777529