Gate insulator layer for electronic devices

• Main Authors: RHODES, LARRY F, FUJITA, KAZUYOSHI, MISKIEWICZ, PAWEL, KANDANARACHCHI, PRAMOD, CULL, TOBY, CARRASCO-OROZCO, MIGUEL, BELL, ANDREW, NG, HENDRA, MUELLER, DAVID CHRISTOPH, SMITH, STEVEN, ELCE, EDMUND
• Format: Patent
• Language: English; French; German
• Published: 13.07.2016
• Subjects: CHEMISTRY; COMPOSITIONS BASED THEREON; ELECTRICITY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP

Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloole...